Vishay TrenchFET Type P-Channel MOSFET, 14.9 A, 30 V Enhancement, 8-Pin SO-8 SI4825DDY-T1-GE3

RS Stock No.:: 180-8134
Mfr. Part No.:: SI4825DDY-T1-GE3
Brand:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 14.9 A, 30 V Enhancement, 8-Pin SO-8 SI4825DDY-T1-GE3

Subtotal (1 pack of 10 units)*

Kr.89 23

(exc. VAT)

Kr.111 54

(inc. VAT)

FREE delivery for online orders over 500,00 kr

Last RS stock

Final 2 150 unit(s), ready to ship

Units	Per unit	Per Pack*
10 +	Kr. 8,923	Kr. 89,23

*price indicative

RS Stock No.:: 180-8134
Mfr. Part No.:: SI4825DDY-T1-GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	14.9A
	Maximum Drain Source Voltage Vds	30V
	Series	TrenchFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	20.5mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Power Dissipation Pd	3.2W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	29.5nC
	Maximum Operating Temperature	150°C
	Width	6.2 mm
	Height	1.75mm
	Standards/Approvals	No
	Length	5mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 14.9A
	Maximum Drain Source Voltage Vds 30V
	Series TrenchFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 20.5mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Power Dissipation Pd 3.2W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 29.5nC
	Maximum Operating Temperature 150°C
	Width 6.2 mm
	Height 1.75mm
	Standards/Approvals No
	Length 5mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 25V. It has drain-source resistance of 12.5mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 5W and continuous drain current of 14.9A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Load Switch

• Notebook Adaptor Switch

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested