Vishay TrenchFET Type P-Channel MOSFET, 23 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS27DN-T1-GE3

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Subtotal (1 pack of 20 units)*

Kr.141 64 

(exc. VAT)

Kr.177 04 

(inc. VAT)

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Last RS stock
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Units
Per unit
Per Pack*
20 - 180Kr. 7,082Kr. 141,64
200 - 480Kr. 5,594Kr. 111,88
500 - 980Kr. 4,954Kr. 99,08
1000 - 1980Kr. 4,25Kr. 85,00
2000 +Kr. 3,541Kr. 70,82

*price indicative

Packaging Options:
RS Stock No.:
814-1323
Mfr. Part No.:
SISS27DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

92nC

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

57W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

0.78mm

Length

3.3mm

Width

3.3 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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