Vishay TrenchFET Type P-Channel MOSFET, 23 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS27DN-T1-GE3

Subtotal (1 pack of 20 units)*

Kr.47 08 

(exc. VAT)

Kr.58 84 

(inc. VAT)

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20 +Kr. 2,354Kr. 47,08

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Packaging Options:
RS Stock No.:
814-1323
Mfr. Part No.:
SISS27DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

57W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

92nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.3mm

Height

0.78mm

Standards/Approvals

No

Width

3.3 mm

Automotive Standard

No

COO (Country of Origin):
CN

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