Vishay Single 1 Type N-Channel Power MOSFET, 2.5 A, 500 V

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Subtotal (1 pack of 5 units)*

Kr.103 19 

(exc. VAT)

Kr.128 99 

(inc. VAT)

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Being discontinued
  • Final 990 unit(s), ready to ship
Units
Per unit
Per Pack*
5 - 45Kr. 20,638Kr. 103,19
50 - 120Kr. 18,578Kr. 92,89
125 - 245Kr. 17,526Kr. 87,63
250 - 495Kr. 16,52Kr. 82,60
500 +Kr. 15,466Kr. 77,33

*price indicative

RS Stock No.:
180-8659
Mfr. Part No.:
IRF820ASPBF
Brand:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.5A

Maximum Drain Source Voltage Vds

500V

Maximum Drain Source Resistance Rds

3Ω

Typical Gate Charge Qg @ Vgs

17nC

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

50W

Minimum Operating Temperature

-55°C

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Length

2.79mm

Width

10.67 mm

Standards/Approvals

RoHS 2002/95/EC, IEC 61249-2-21

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay IRF820AS is a N-channel power MOSFET having drain to source(Vds) voltage of 500V.The gate to source voltage(VGS) is 30V. It is having D2PAK (TO-263)and I2PAK (TO-262) package. It offers drain to source resistance (RDS.) 3ohms at 10VGS. Maximum drain current 17A.

Low gate charge Qg results in simple drive requirement

Improved gate, avalanche, and dynamic dV/dt ruggedness

Fully characterized capacitance and avalanche voltage and current

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