DiodesZetex DMN Type N-Channel MOSFET, 8 A, 60 V Enhancement, 4-Pin SOT-223 DMN6069SE-13
- RS Stock No.:
- 182-7095
- Mfr. Part No.:
- DMN6069SE-13
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 50 units)*
Kr.177 00
(exc. VAT)
Kr.221 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 1 550 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | Kr. 3,54 | Kr. 177,00 |
| 250 - 450 | Kr. 3,093 | Kr. 154,65 |
| 500 - 950 | Kr. 2,476 | Kr. 123,80 |
| 1000 - 1950 | Kr. 2,066 | Kr. 103,30 |
| 2000 + | Kr. 1,901 | Kr. 95,05 |
*price indicative
- RS Stock No.:
- 182-7095
- Mfr. Part No.:
- DMN6069SE-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMN | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 11W | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.55 mm | |
| Length | 6.55mm | |
| Standards/Approvals | No | |
| Height | 1.65mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMN | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 11W | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.55 mm | ||
Length 6.55mm | ||
Standards/Approvals No | ||
Height 1.65mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Motor control
Transformer driving switch
DC-DC Converters
Power management functions
Uninterrupted power supply
Related links
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-223 DMN6069SE-13
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-223 DMN6068SE-13
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-223 DMN6040SE-13
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-223 ZVN2106GTA
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-223 ZVN4206GTA
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-223 ZVN4306GTA
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-223 ZXMN6A08GTA
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-223 ZXMN6A09GTA
