DiodesZetex DMN Type N-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin X2-DFN DMN2450UFB4-7R
- RS Stock No.:
- 182-7146
- Mfr. Part No.:
- DMN2450UFB4-7R
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 250 units)*
Kr.232 25
(exc. VAT)
Kr.290 25
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 15. juli 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 250 - 250 | Kr. 0,929 | Kr. 232,25 |
| 500 - 750 | Kr. 0,797 | Kr. 199,25 |
| 1000 - 1250 | Kr. 0,697 | Kr. 174,25 |
| 1500 - 1750 | Kr. 0,619 | Kr. 154,75 |
| 2000 + | Kr. 0,557 | Kr. 139,25 |
*price indicative
- RS Stock No.:
- 182-7146
- Mfr. Part No.:
- DMN2450UFB4-7R
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | X2-DFN | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 900mW | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.65 mm | |
| Height | 0.35mm | |
| Length | 1.05mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type X2-DFN | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 900mW | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 0.65 mm | ||
Height 0.35mm | ||
Length 1.05mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Footprint of just 0.6mm2
– Thirteen Times Smaller than SOT23
0.4mm Profile – Ideal for Low Profile Applications
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Applications
Load Switch
Related links
- Diodes Inc N-Channel MOSFET 20 V, 3-Pin X2-DFN1006 DMN2450UFB4-7R
- Diodes Inc N-Channel MOSFET 20 V, 3-Pin X2-DFN1006 DMN2300UFB4-7B
- Diodes Inc N-Channel MOSFET 20 V, 3-Pin X2-DFN1006 DMN2991UFB4-7B
- Diodes Inc BC846BLP4-7B NPN Transistor 65 V, 3-Pin X2-DFN1006
- Diodes Inc DMN2991UFO N-Channel MOSFET 20 V, 3-Pin X2-DFN0604-3 DMN2991UFO-7B
- Diodes Inc DMP22D5UFO P-Channel MOSFET 20 V, 3-Pin X2-DFN0604-3 DMP22D5UFO-7B
- Diodes Inc P-Channel MOSFET 20 V, 3-Pin X2-DFN2015 DMP2045UFY4-7
- Diodes Inc DMP Plastic P-Channel MOSFET 20 V, 3-Pin X2-DFN2015 DMP2069UFY4Q-7