DiodesZetex DMN2991UFO Type N-Channel MOSFET, 540 mA, 20 V Enhancement, 3-Pin X2-DFN DMN2991UFB4-7B
- RS Stock No.:
- 244-1922
- Mfr. Part No.:
- DMN2991UFB4-7B
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 25 units)*
Kr.9 425
(exc. VAT)
Kr.11 775
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 7 850 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 475 | Kr. 0,377 | Kr. 9,43 |
| 500 - 975 | Kr. 0,366 | Kr. 9,15 |
| 1000 - 2475 | Kr. 0,357 | Kr. 8,93 |
| 2500 - 4975 | Kr. 0,348 | Kr. 8,70 |
| 5000 + | Kr. 0,339 | Kr. 8,48 |
*price indicative
- RS Stock No.:
- 244-1922
- Mfr. Part No.:
- DMN2991UFB4-7B
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 540mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN2991UFO | |
| Package Type | X2-DFN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 990mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.35nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.44W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.65 mm | |
| Length | 1.05mm | |
| Height | 0.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 540mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN2991UFO | ||
Package Type X2-DFN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 990mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.35nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.44W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 0.65 mm | ||
Length 1.05mm | ||
Height 0.4mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex MOSFET is designed to minimize the on state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications.
0.4mm Profile ideal for low profile applications
Low gate threshold voltage
Totally lead free and fully RoHS compliant
Halogen and antimony free green device
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