DiodesZetex Isolated 2 Type N-Channel MOSFET, 540 mA, 20 V Enhancement, 6-Pin SOT-26 DMN2004DMK-7
- RS Stock No.:
- 823-2927
- Mfr. Part No.:
- DMN2004DMK-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 25 units)*
Kr.96 10
(exc. VAT)
Kr.120 125
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 28. mai 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 125 | Kr. 3,844 | Kr. 96,10 |
| 150 - 725 | Kr. 2,196 | Kr. 54,90 |
| 750 - 1475 | Kr. 1,958 | Kr. 48,95 |
| 1500 + | Kr. 1,917 | Kr. 47,93 |
*price indicative
- RS Stock No.:
- 823-2927
- Mfr. Part No.:
- DMN2004DMK-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 540mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-26 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 225mW | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | -65°C | |
| Transistor Configuration | Isolated | |
| Length | 3.1mm | |
| Width | 1.7 mm | |
| Height | 1.3mm | |
| Standards/Approvals | MIL-STD-202, AEC-Q101, J-STD-020, UL 94V-0, RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 540mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-26 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 225mW | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature -65°C | ||
Transistor Configuration Isolated | ||
Length 3.1mm | ||
Width 1.7 mm | ||
Height 1.3mm | ||
Standards/Approvals MIL-STD-202, AEC-Q101, J-STD-020, UL 94V-0, RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Related links
- Diodes Inc Dual N-Channel MOSFET 20 V, 6-Pin SOT-26 DMN2004DMK-7
- onsemi Dual N-Channel MOSFET 20 V, 6-Pin SOT-563 NTZD3154NT1G
- Diodes Inc DMN2991UFO N-Channel MOSFET 20 V, 3-Pin X2-DFN0604-3 DMN2991UFO-7B
- Diodes Inc Dual N/P-Channel MOSFET 540 mA 6-Pin SOT-363 DMC2004DWK-7
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin SOT-23 BSS670S2LH6327XTSA1
- Infineon N-Channel MOSFET 55 V, 3-Pin SOT-23 BSS670S2LH6433XTMA1
- Diodes Inc Dual P-Channel MOSFET 20 V, 6-Pin SOT-26 DMP2240UDM-7
- Diodes Inc Dual N-Channel MOSFET 60 V, 6-Pin SOT-26 DMN601DMK-7