DiodesZetex Dual 2 Type N-Channel Power MOSFET, 9.1 A, 60 V Enhancement, 8-Pin VDFN DMT6018LDR-13

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Subtotal (1 pack of 10 units)*

Kr.59 86 

(exc. VAT)

Kr.74 82 

(inc. VAT)

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Per unit
Per Pack*
10 +Kr. 5,986Kr. 59,86

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Packaging Options:
RS Stock No.:
182-7493
Mfr. Part No.:
DMT6018LDR-13
Brand:
DiodesZetex
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Brand

DiodesZetex

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9.1A

Maximum Drain Source Voltage Vds

60V

Package Type

VDFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

26mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.2nC

Minimum Operating Temperature

150°C

Maximum Power Dissipation Pd

1.9W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.75V

Maximum Operating Temperature

-55°C

Transistor Configuration

Dual

Standards/Approvals

J-STD-020, MIL-STD-202, UL 94V-0, AEC-Q101, RoHS

Length

3.05mm

Width

3.05 mm

Height

0.8mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Applications

Power Management Functions

Analog Switch

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