Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Series	FCMT
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	181W
	Maximum Gate Source Voltage Vgs	30 V
	Typical Gate Charge Qg @ Vgs	49nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Width	8 mm
	Standards/Approvals	No
	Length	8mm
	Height	1.05mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Series FCMT
	Package Type PQFN
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 181W
	Maximum Gate Source Voltage Vgs 30 V
	Typical Gate Charge Qg @ Vgs 49nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Width 8 mm
	Standards/Approvals No
	Length 8mm
	Height 1.05mm
	Automotive Standard No

Non Compliant with RoHS

700 V @ TJ = 150 oC

Leadless Ultra-thin SMD package

Kelvin contact

Ultra Low Gate Charge (Typ. Qg = 49 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 406 pF)

Optimized Capacitance

Typ. RDS(on) = 100 mΩ

Internal Gate Resistance: 0.5 Ω

Higher system reliability at low temperature operation

High power density

Low gate noise and switching loss

Low switching loss

Lower peak Vds and lower Vgs oscillation

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

LED Lighting

Adapter

onsemi FCMT Type N-Channel MOSFET, 24 A, 650 V Enhancement, 4-Pin PQFN

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