onsemi Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-263 NVB082N65S3F

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Subtotal (1 pack of 2 units)*

Kr.80 17 

(exc. VAT)

Kr.100 212 

(inc. VAT)

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2 +Kr. 40,085Kr. 80,17

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Packaging Options:
RS Stock No.:
186-1481
Mfr. Part No.:
NVB082N65S3F
Brand:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

82mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

313W

Typical Gate Charge Qg @ Vgs

81nC

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

4.58mm

Standards/Approvals

No

Width

9.65 mm

Length

10.67mm

Automotive Standard

AEC-Q101

Non Compliant with RoHS

SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150°C

Typ. RDS(on) = 64 m

Ultra Low Gate Charge (Typ. Qg = 81 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)

These Devices are Pb−Free

Typical Applications

Automotive On Board Charger

Automotive DC/DC Converter for HEV

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