onsemi Dual 2 Type N-Channel MOSFET, 1 A, 100 V, 6-Pin TSOT-23

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Subtotal (1 reel of 3000 units)*

Kr.7 551 00 

(exc. VAT)

Kr.9 438 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 2,517Kr. 7 551,00

*price indicative

RS Stock No.:
186-7147
Mfr. Part No.:
FDC3601N
Brand:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1A

Maximum Drain Source Voltage Vds

100V

Package Type

TSOT-23

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

550mΩ

Typical Gate Charge Qg @ Vgs

3.7nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

0.96W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Length

3.1mm

Standards/Approvals

No

Height

1mm

Width

3 mm

Number of Elements per Chip

2

Automotive Standard

No

These N-Channel 100V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

1.0 A, 100 V

RDS(on) = 500 mΩ@ VGS = 10 V

RDS(on) = 550 mΩ @ VGS = 6 V

Low gate charge (3.7nC typical)

Fast switching speed

High performance trench technology for extremely low RDS(ON)

SuperSOT™-6 package: small footprint 72%(smaller than standard SO-8), low profile (1mm thick)

Applications

This product is general usage and suitable for many different applications.

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