MPN

Vishay SiRA99DP Type P-Channel MOSFET, 195 A, 30 V Enhancement, 8-Pin SO-8

RS Stock No.:: 188-4884
Mfr. Part No.:: SIRA99DP-T1-GE3
Brand:: Vishay

Vishay SiRA99DP Type P-Channel MOSFET, 195 A, 30 V Enhancement, 8-Pin SO-8

Unavailable

RS will no longer stock this product.

RS Stock No.:: 188-4884
Mfr. Part No.:: SIRA99DP-T1-GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	195A
	Maximum Drain Source Voltage Vds	30V
	Series	SiRA99DP
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	2.6mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.1V
	Typical Gate Charge Qg @ Vgs	172.5nC
	Maximum Power Dissipation Pd	104W
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	5.99mm
	Width	5 mm
	Height	1.07mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 195A
	Maximum Drain Source Voltage Vds 30V
	Series SiRA99DP
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 2.6mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.1V
	Typical Gate Charge Qg @ Vgs 172.5nC
	Maximum Power Dissipation Pd 104W
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 5.99mm
	Width 5 mm
	Height 1.07mm
	Automotive Standard No

Datasheet SIRA99DP-T1-GE3

P-Channel 30 V (D-S) MOSFET.

TrenchFET® Gen IV p-channel power MOSFET

Very low RDS(on) minimizes voltage drop and reduces conduction loss

Eliminates the need for charge pump

Vishay SiRA99DP Type P-Channel MOSFET, 195 A, 30 V Enhancement, 8-Pin SO-8

Related links