P-Channel MOSFET, 500 mA, 30 V, 3-Pin PowerPAK 0806 Vishay SiUD401ED-T1-GE3
- RS Stock No.:
- 188-4963P
- Mfr. Part No.:
- SiUD401ED-T1-GE3
- Brand:
- Vishay
Available to back order for despatch when stock is available
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
Kr. 2,592
(exc. VAT)
Kr. 3,24
(inc. VAT)
Units | Per unit |
|---|---|
| 100 - 200 | Kr. 2,592 |
| 250 - 450 | Kr. 2,537 |
| 500 - 950 | Kr. 2,109 |
| 1000 + | Kr. 1,624 |
- RS Stock No.:
- 188-4963P
- Mfr. Part No.:
- SiUD401ED-T1-GE3
- Brand:
- Vishay
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
P-Channel 30 V (D-S) MOSFET.
TrenchFET® Gen III p-channel power MOSFET
Ultra small 0.8 mm x 0.6 mm outline
Ultra thin 0.4 mm max. Height
Ultra small 0.8 mm x 0.6 mm outline
Ultra thin 0.4 mm max. Height
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 500 mA |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PowerPAK 0806 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 3.5 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.4V |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 1.25 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±12 V |
| Length | 0.8mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 1.3 nC @ 15 V |
| Width | 0.6mm |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
| Height | 0.4mm |