Vishay SQJA38EP Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin SO-8 SQJA38EP-T1_GE3
- RS Stock No.:
- 188-5120
- Mfr. Part No.:
- SQJA38EP-T1_GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr. 97,01
(exc. VAT)
Kr. 121,26
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 16 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 9,701 | Kr. 97,01 |
| 100 - 240 | Kr. 9,129 | Kr. 91,29 |
| 250 - 490 | Kr. 7,768 | Kr. 77,68 |
| 500 - 990 | Kr. 7,276 | Kr. 72,76 |
| 1000 + | Kr. 6,807 | Kr. 68,07 |
*price indicative
- RS Stock No.:
- 188-5120
- Mfr. Part No.:
- SQJA38EP-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQJA38EP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 48.2nC | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.47 mm | |
| Height | 1.01mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQJA38EP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 48.2nC | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Operating Temperature 175°C | ||
Width 4.47 mm | ||
Height 1.01mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Automotive N-Channel 40 V (D-S) 175 °C MOSFET.
TrenchFET® power MOSFET
Related links
- Vishay SQJA38EP Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SQJ208EP-T1_GE3
- Vishay SQJB46EP_RC Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8 SQJB46EP-T1_GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay SQJB46EP_RC Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212 SiSS12DN-T1-GE3
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212 SQS462EN-T1_GE3