Vishay Siliconix TrenchFET Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 reel of 3000 units)*

Kr.12 933 00 

(exc. VAT)

Kr.16 167 00 

(inc. VAT)

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  • Final 12 000 unit(s), ready to ship
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Per Reel*
3000 +Kr. 4,311Kr. 12 933,00

*price indicative

RS Stock No.:
178-3701
Mfr. Part No.:
SiSS12DN-T1-GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

65.7W

Typical Gate Charge Qg @ Vgs

59nC

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.07mm

Standards/Approvals

No

Width

3.15 mm

Length

3.15mm

Automotive Standard

No

RoHS Status: Exempted

COO (Country of Origin):
CN
TrenchFET® Gen IV power MOSFET

Very low RDS(on) in a compact and thermally enhanced package

Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss

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