Vishay Siliconix TrenchFET Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SiSS12DN-T1-GE3

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Subtotal (1 pack of 10 units)*

Kr. 149,64

(exc. VAT)

Kr. 187,05

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90Kr. 14,964Kr. 149,64
100 - 490Kr. 12,744Kr. 127,44
500 - 990Kr. 11,188Kr. 111,88
1000 +Kr. 9,758Kr. 97,58

*price indicative

Packaging Options:
RS Stock No.:
178-3920
Mfr. Part No.:
SiSS12DN-T1-GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

40V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

59nC

Maximum Power Dissipation Pd

65.7W

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.15mm

Height

1.07mm

Standards/Approvals

No

Automotive Standard

No

RoHS Status: Exempted

COO (Country of Origin):
CN
TrenchFET® Gen IV power MOSFET

Very low RDS(on) in a compact and thermally enhanced package

Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss

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