Vishay Siliconix TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SiDR392DP-T1-GE3
- RS Stock No.:
- 178-3934
- Mfr. Part No.:
- SiDR392DP-T1-GE3
- Brand:
- Vishay Siliconix
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.144 23
(exc. VAT)
Kr.180 29
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 2 820 unit(s) shipping from 09. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 28,846 | Kr. 144,23 |
| 50 - 95 | Kr. 25,874 | Kr. 129,37 |
| 100 - 495 | Kr. 24,52 | Kr. 122,60 |
| 500 - 995 | Kr. 23,048 | Kr. 115,24 |
| 1000 + | Kr. 20,164 | Kr. 100,82 |
*price indicative
- RS Stock No.:
- 178-3934
- Mfr. Part No.:
- SiDR392DP-T1-GE3
- Brand:
- Vishay Siliconix
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 900μΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.99mm | |
| Height | 1.07mm | |
| Width | 5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 900μΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.99mm | ||
Height 1.07mm | ||
Width 5 mm | ||
Automotive Standard No | ||
RoHS Status: Exempted
- COO (Country of Origin):
- TW
TrenchFET® Gen IV power MOSFET
Top side cooling feature provides additional venue for thermal transfer
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
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