Vishay Siliconix TrenchFET Type N-Channel MOSFET, 14.2 A, 100 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 reel of 3000 units)*

Kr.7 806 00 

(exc. VAT)

Kr.9 756 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 2,602Kr. 7 806,00

*price indicative

RS Stock No.:
178-3693
Mfr. Part No.:
SiS110DN-T1-GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

14.2A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

70mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

8.5nC

Maximum Power Dissipation Pd

24W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

3.15mm

Width

3.15 mm

Standards/Approvals

No

Height

1.07mm

Automotive Standard

No

RoHS Status: Exempted

COO (Country of Origin):
CN
TrenchFET® Gen IV power MOSFET

Tuned for the lowest RDS - Qoss FOM

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