STMicroelectronics Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

Kr.25 835 00 

(exc. VAT)

Kr.32 295 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 10,334Kr. 25 835,00

*price indicative

RS Stock No.:
188-8287
Mfr. Part No.:
STD13N60DM2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

12.5nC

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

110W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

2.17mm

Length

6.6mm

Width

6.2 mm

Automotive Standard

No

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

Extremely high dv/dt ruggedness

Zener-protected

Applications

Switching applications

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