STMicroelectronics Type N-Channel MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-252 STD12N60DM6

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Subtotal (1 pack of 5 units)*

Kr.105 02 

(exc. VAT)

Kr.131 275 

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45Kr. 21,004Kr. 105,02
50 - 95Kr. 17,938Kr. 89,69
100 - 245Kr. 14,094Kr. 70,47
250 - 995Kr. 13,75Kr. 68,75
1000 +Kr. 10,158Kr. 50,79

*price indicative

Packaging Options:
RS Stock No.:
210-8740
Mfr. Part No.:
STD12N60DM6
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

390mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

90W

Typical Gate Charge Qg @ Vgs

17nC

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

150°C

Height

2.4mm

Standards/Approvals

No

Width

6.2 mm

Length

6.6mm

Automotive Standard

AEC-Q101

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

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