STMicroelectronics Type N-Channel MOSFET, 10 A, 650 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

Kr.23 965 00 

(exc. VAT)

Kr.29 955 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 9,586Kr. 23 965,00

*price indicative

RS Stock No.:
188-8285
Mfr. Part No.:
STD11N60DM2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

420mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

25 V

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

16.5nC

Maximum Power Dissipation Pd

110W

Maximum Operating Temperature

150°C

Height

2.17mm

Length

6.6mm

Standards/Approvals

No

Width

6.2 mm

Automotive Standard

No

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

Extremely high dv/dt ruggedness

Zener-protected

Applications

Switching applications

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