STMicroelectronics Type N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

Kr.23 335 00 

(exc. VAT)

Kr.29 170 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 9,334Kr. 23 335,00

*price indicative

RS Stock No.:
188-8286
Mfr. Part No.:
STD11N65M2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

680mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Power Dissipation Pd

85W

Maximum Gate Source Voltage Vgs

25 V

Typical Gate Charge Qg @ Vgs

100nC

Maximum Operating Temperature

150°C

Height

2.17mm

Length

6.6mm

Width

6.2 mm

Standards/Approvals

No

Automotive Standard

No

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.

Extremely low gate charge

Excellent output capacitance (COSS) profile

Zener-protected

Applications

Switching applications

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