STMicroelectronics STD Type N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-252 STD86N3LH5
- RS Stock No.:
- 239-6330
- Mfr. Part No.:
- STD86N3LH5
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.81 68
(exc. VAT)
Kr.102 10
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 4 900 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | Kr. 16,336 | Kr. 81,68 |
| 10 - 95 | Kr. 16,038 | Kr. 80,19 |
| 100 - 245 | Kr. 15,672 | Kr. 78,36 |
| 250 - 495 | Kr. 15,398 | Kr. 76,99 |
| 500 + | Kr. 15,01 | Kr. 75,05 |
*price indicative
- RS Stock No.:
- 239-6330
- Mfr. Part No.:
- STD86N3LH5
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | STD | |
| Package Type | TO-252 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 70W | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.6mm | |
| Height | 2.4mm | |
| Width | 6.2 mm | |
| Standards/Approvals | UL | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series STD | ||
Package Type TO-252 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 70W | ||
Maximum Operating Temperature 175°C | ||
Length 6.6mm | ||
Height 2.4mm | ||
Width 6.2 mm | ||
Standards/Approvals UL | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.
Low on-resistance RDSon
High avalanche ruggedness
Low gate drive power losses
30 V Vdss
80 A Id
Related links
- STMicroelectronics N-Channel MOSFET 30 V, 3-Pin DPAK STD86N3LH5
- Taiwan Semi N-Channel MOSFET 30 V, 3-Pin DPAK TSM060N03CP ROG
- Diodes Inc N-Channel MOSFET 30 V, 3-Pin DPAK DMN3009SK3-13
- ROHM RD3E08BBJHRB P-Channel MOSFET 30 V, 3-Pin DPAK RD3E08BBJHRBTL
- STMicroelectronics N-Channel MOSFET 55 V, 3-Pin D2PAK STB80NF55-06T4
- STMicroelectronics STripFET H7 N-Channel MOSFET 100 V, 3-Pin DPAK STD100N10F7
- STMicroelectronics DeepGate 80 A 3-Pin DPAK STD80N4F6
- STMicroelectronics STripFET F3 N-Channel MOSFET 55 V, 3-Pin DPAK STD65N55F3