STMicroelectronics STP Type N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

Kr.4 579 45 

(exc. VAT)

Kr.5 724 30 

(inc. VAT)

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Units
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Per Tube*
50 +Kr. 91,589Kr. 4 579,45

*price indicative

RS Stock No.:
248-9686
Mfr. Part No.:
STP60N043DM9
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

STP

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

245W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

10.4 mm

Length

28.9mm

Height

4.6mm

Standards/Approvals

UL

Automotive Standard

AEC-Q101

The STMicroelectronics product is a N channel power MOSFET based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS on per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The fast recovery diode featuring very low recovery charge, time and RDS on makes this fast switching super junction power MOSFET tailored for the most demanding high efficiency bridge topologies and ZVS phase shift converters.

Fast recovery body diode

Worldwide best RDS on per area among silicon based fast recovery devices

Low gate charge, input capacitance and resistance

100 percent avalanche tested

Extremely dv/dt ruggedness

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