STMicroelectronics STP N channel-Channel Power MOSFET, 100 A, 80 V Enhancement, 3-Pin TO-220 STP100N8F6

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Subtotal (1 unit)*

Kr. 23,11

(exc. VAT)

Kr. 28,89

(inc. VAT)

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1 - 9Kr. 23,11
10 - 99Kr. 11,90
100 - 499Kr. 9,50
500 - 999Kr. 7,55
1000 +Kr. 6,75

*price indicative

RS Stock No.:
719-658
Mfr. Part No.:
STP100N8F6
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-220

Series

STP

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.009Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

100nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

176W

Maximum Operating Temperature

175°C

Height

4.6mm

Length

15.75mm

COO (Country of Origin):
CN
The STMicroelectronics N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Very low on-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss

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