STMicroelectronics STP Type N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

Kr.4 478 75 

(exc. VAT)

Kr.5 598 45 

(inc. VAT)

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Units
Per unit
Per Tube*
50 +Kr. 89,575Kr. 4 478,75

*price indicative

RS Stock No.:
248-9688
Mfr. Part No.:
STP65N045M9
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

STP

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

245W

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Length

28.9mm

Standards/Approvals

UL

Width

10.4 mm

Height

4.6mm

Automotive Standard

AEC-Q101

The STMicroelectronics product is a N channel power MOSFET based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS on per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.

Worldwide best FOM RDS on Qg among silicon based devices

Higher VDSS rating

Higher dv/dt capability

Excellent switching performance

Easy to drive

100 percent avalanche tested

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