STMicroelectronics STP Type N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220 STP60N043DM9

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Kr.89 87 

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Kr.112 34 

(inc. VAT)

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Packaging Options:
RS Stock No.:
248-9687
Mfr. Part No.:
STP60N043DM9
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Series

STP

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Power Dissipation Pd

245W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

175°C

Standards/Approvals

UL

Height

4.6mm

Length

28.9mm

Width

10.4 mm

Automotive Standard

AEC-Q101

The STMicroelectronics product is a N channel power MOSFET based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS on per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The fast recovery diode featuring very low recovery charge, time and RDS on makes this fast switching super junction power MOSFET tailored for the most demanding high efficiency bridge topologies and ZVS phase shift converters.

Fast recovery body diode

Worldwide best RDS on per area among silicon based fast recovery devices

Low gate charge, input capacitance and resistance

100 percent avalanche tested

Extremely dv/dt ruggedness

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