STMicroelectronics STP Type N-Channel MOSFET, 7 A, 800 V Enhancement, 3-Pin TO-220 STP80N600K6

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Subtotal (1 tube of 50 units)*

Kr.782 50 

(exc. VAT)

Kr.978 00 

(inc. VAT)

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  • 100 unit(s) ready to ship
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Units
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Per Tube*
50 +Kr. 15,65Kr. 782,50

*price indicative

RS Stock No.:
275-1355
Mfr. Part No.:
STP80N600K6
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

800V

Series

STP

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

86W

Typical Gate Charge Qg @ Vgs

10.7nC

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Length

28.9mm

Standards/Approvals

RoHS

Width

10.4 mm

Height

4.6mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics high voltage N-channel power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best in class on resistance per area and gate charge for applications requiring superior power density and high efficiency.

Ultra low gate charge

100 percent avalanche tested

Zener protected

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