Vishay E Type N-Channel MOSFET, 7 A, 800 V Enhancement, 3-Pin TO-220 SIHA17N80AE-GE3

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Subtotal (1 pack of 5 units)*

Kr.88 43 

(exc. VAT)

Kr.110 54 

(inc. VAT)

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  • 975 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Pack*
5 - 45Kr. 17,686Kr. 88,43
50 - 120Kr. 15,924Kr. 79,62
125 - 245Kr. 12,744Kr. 63,72
250 - 495Kr. 10,594Kr. 52,97
500 +Kr. 9,198Kr. 45,99

*price indicative

Packaging Options:
RS Stock No.:
210-4961
Mfr. Part No.:
SIHA17N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

62nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

34W

Maximum Operating Temperature

150°C

Length

28.1mm

Height

4.3mm

Width

9.7 mm

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET has Thin-Lead TO-220 FULLPAK package type with 7 A drain current.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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