Vishay E Type N-Channel MOSFET, 21 A, 800 V Enhancement, 3-Pin TO-263 SIHB24N80AE-GE3

Bulk discount available

Subtotal (1 pack of 2 units)*

Kr.66 81 

(exc. VAT)

Kr.83 512 

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 944 unit(s), ready to ship
Units
Per unit
Per Pack*
2 - 18Kr. 33,405Kr. 66,81
20 - 48Kr. 30,145Kr. 60,29
50 - 98Kr. 28,37Kr. 56,74
100 - 198Kr. 26,71Kr. 53,42
200 +Kr. 24,77Kr. 49,54

*price indicative

Packaging Options:
RS Stock No.:
228-2847
Mfr. Part No.:
SIHB24N80AE-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

184mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

59nC

Maximum Power Dissipation Pd

208W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Related links