Vishay E Type N-Channel MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263

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Subtotal (1 tube of 50 units)*

Kr.1 049 50 

(exc. VAT)

Kr.1 312 00 

(inc. VAT)

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Units
Per unit
Per Tube*
50 - 50Kr. 20,99Kr. 1 049,50
100 - 200Kr. 18,261Kr. 913,05
250 +Kr. 15,533Kr. 776,65

*price indicative

RS Stock No.:
210-4971
Mfr. Part No.:
SIHB17N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

15A

Maximum Drain Source Voltage Vds

800V

Series

E

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

41nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

179W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Length

14.61mm

Height

4.06mm

Width

9.65 mm

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET has D2PAK (TO-263) package type with 15 A drain current.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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