Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3
- RS Stock No.:
- 210-4971
- Mfr. Part No.:
- SIHB17N80AE-GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
Kr. 933,50
(exc. VAT)
Kr. 1 167,00
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 700 unit(s) shipping from 17 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | Kr. 18,67 | Kr. 933,50 |
| 100 - 200 | Kr. 16,243 | Kr. 812,15 |
| 250 + | Kr. 13,815 | Kr. 690,75 |
*price indicative
- RS Stock No.:
- 210-4971
- Mfr. Part No.:
- SIHB17N80AE-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 9.65mm | |
| Length | 14.61mm | |
| Height | 4.06mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 9.65mm | ||
Length 14.61mm | ||
Height 4.06mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 15A Continuous Drain Current - SIHB17N80AE-GE3
This power MOSFET is a high-voltage N-channel semiconductor device designed for switching and power-conversion duties in surface-mount applications. It operates across a wide temperature range and is intended for use where robust high-voltage switching, moderate current handling and compact SMD packaging are required.
Features and Benefits:
• 800V maximum drain-source voltage enabling high-voltage switching
• 15A continuous drain current for moderate load handling
• 250mΩ Rds(on) minimises conduction losses under load
• 179W power dissipation supports high-power operation
• 41nC typical gate charge for predictable switching behaviour
• 30V maximum gate-source voltage ensures gate drive margin
• 15A continuous drain current for moderate load handling
• 250mΩ Rds(on) minimises conduction losses under load
• 179W power dissipation supports high-power operation
• 41nC typical gate charge for predictable switching behaviour
• 30V maximum gate-source voltage ensures gate drive margin
Applications
• Suitable for SMPS primary-side high-voltage switching
• Ideal for industrial high-voltage power stages
• Used with boost converters requiring 800V devices
• Can be used for power-factor correction front ends
• Ideal for industrial high-voltage power stages
• Used with boost converters requiring 800V devices
• Can be used for power-factor correction front ends
What thermal extremes can this device withstand in operation?
It is specified to operate from -55°C up to 150°C, allowing use in environments with large temperature variations.
What package and mounting style should I plan for on the board?
The device is supplied in a TO-263 package intended for surface mounting to heatsinking areas on the board.
How many electrical connections does it present for layout considerations?
The component has three pins, corresponding to the gate, drain and source terminations for PCB routing.
What is the channel mode and how does it affect switching?
The transistor is an enhancement-mode N-channel device, requiring a positive gate drive relative to the source to switch on.
Related links
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC SIHG17N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB15N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 600 V, 3-Pin TO-263 SIHB15N60E-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 SIHP17N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC SIHG21N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220AB SIHP15N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-252 SIHD2N80AE-GE3