Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-247AC SIHG17N80AE-GE3
- RS Stock No.:
- 210-4985
- Mfr. Part No.:
- SIHG17N80AE-GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 25 units)*
Kr. 600,60
(exc. VAT)
Kr. 750,75
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 1 475 unit(s) shipping from 17 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | Kr. 24,024 | Kr. 600,60 |
| 50 - 100 | Kr. 22,587 | Kr. 564,68 |
| 125 + | Kr. 20,423 | Kr. 510,58 |
*price indicative
- RS Stock No.:
- 210-4985
- Mfr. Part No.:
- SIHG17N80AE-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | E | |
| Package Type | TO-247AC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Operating Temperature | 150°C | |
| Length | 35.3mm | |
| Height | 4.83mm | |
| Standards/Approvals | RoHS | |
| Width | 15.66mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series E | ||
Package Type TO-247AC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Operating Temperature 150°C | ||
Length 35.3mm | ||
Height 4.83mm | ||
Standards/Approvals RoHS | ||
Width 15.66mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Maximum Drain Source Voltage, 15A Maximum Continuous Drain Current - SIHG17N80AE-GE3
This power MOSFET is a high-voltage switching transistor designed for demanding power-conversion environments. It operates as an enhancement-mode N-channel device and is intended for through-hole mounting in applications requiring robust high-voltage handling and significant continuous current capability. The component meets RoHS requirements and functions across a wide ambient temperature range.
Features and Benefits:
• 800V drain-source rating enables high-voltage system operation
• 15A continuous drain current supports substantial load currents
• 250mΩ RDS(on) yields reduced conduction losses under load
• 179W maximum power dissipation allows high-power switching
• 41nC typical gate charge facilitates predictable switching behaviour
• 30V maximum gate-source tolerance protects against gate overdrive
• 15A continuous drain current supports substantial load currents
• 250mΩ RDS(on) yields reduced conduction losses under load
• 179W maximum power dissipation allows high-power switching
• 41nC typical gate charge facilitates predictable switching behaviour
• 30V maximum gate-source tolerance protects against gate overdrive
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for switch-mode power electronics designs
• Used with flyback and boost converter topologies
• Can be used for industrial motor-drive switch stages
• Suitable for high-voltage laboratory and test equipment
• Ideal for switch-mode power electronics designs
• Used with flyback and boost converter topologies
• Can be used for industrial motor-drive switch stages
• Suitable for high-voltage laboratory and test equipment
What temperature range can it tolerate during operation?
It is specified to function from -55°C up to 150°C, enabling use in both cold-start and elevated-heat environments.
Which package type and mounting style does it use?
The device is supplied in a TO-247AC package and is designed for through-hole PCB mounting for secure mechanical and thermal connection.
How does the forward voltage affect conduction?
The forward voltage of 1.2V indicates the on-state voltage drop under conduction conditions, which factors into thermal design and power-loss calculations.
Is it suitable for automotive qualification testing?
It is not designated as automotive standard
suitability for vehicle use should be evaluated against the required automotive specifications.
Related links
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC SIHG17N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC SIHG21N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC SIHG15N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-247AC SIHG20N50E-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 SIHP17N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220AB SIHP15N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-252 SIHD2N80AE-GE3
