Vishay E N-Channel Power MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247AC SIHG21N80AE-GE3

RS Stock No.:: 188-4876
Mfr. Part No.:: SIHG21N80AE-GE3
Brand:: Vishay

Vishay E N-Channel Power MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247AC SIHG21N80AE-GE3

Bulk discount available

View bulk pricing options

Subtotal (1 tube of 25 units)*

Kr. 813,37

(exc. VAT)

Kr. 1 016,72

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Tube*
25 - 25	Kr. 32,535	Kr. 813,38
50 - 100	Kr. 30,586	Kr. 764,65
125 +	Kr. 27,653	Kr. 691,33

*price indicative

RS Stock No.:: 188-4876
Mfr. Part No.:: SIHG21N80AE-GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	17.4A
	Maximum Drain Source Voltage Vds	800V
	Series	E
	Package Type	TO-247AC
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	235mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	179W
	Typical Gate Charge Qg @ Vgs	48nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	20.82mm
	Length	15.87mm
	Standards/Approvals	RoHS
	Width	5.31mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 17.4A
	Maximum Drain Source Voltage Vds 800V
	Series E
	Package Type TO-247AC
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 235mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 179W
	Typical Gate Charge Qg @ Vgs 48nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 20.82mm
	Length 15.87mm
	Standards/Approvals RoHS
	Width 5.31mm
	Automotive Standard No

Datasheet SIHG21N80AE-GE3

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 17.4A Continuous Drain Current - SIHG21N80AE-GE3

This power MOSFET is a high-voltage, N-channel switching device designed for industrial and power-conversion environments. It operates as an enhancement-mode transistor capable of handling substantial voltages and currents while being mounted through-hole in a TO-247AC package. The device is suitable for systems that demand rugged semiconductor switching across a wide ambient temperature range.

Features and Benefits:

• 800V drain rating enables high-voltage switching capability
• 17.4A continuous drain supports significant load current
• 235mΩ Rds(on) provides reduced conduction losses
• 179W power dissipation allows high-power operation
• 48nC typical gate charge yields predictable switching energy
• 30V gate rating permits common gate-drive voltages

Applications

• Suitable for industrial high-voltage power supplies
• Ideal for inverter and motor-drive switching stages
• Used with hard-switching topologies in power converters
• Can be used for class-D audio amplifiers requiring high voltage
• Suitable for energy and renewable power electronics

What gate-drive voltage range can I use safely?

The device accepts a maximum gate-to-source voltage of 30V, so gate-drive circuits should be designed to remain within this limit to avoid gate stress.

How does it perform across temperature extremes?

The transistor is rated to operate from -55°C up to 150°C, permitting use in elevated-temperature industrial installations with appropriate thermal management.

What mounting considerations apply for PCB design?

It is supplied in a through-hole TO-247AC package, so board layouts should include suitable hole spacing and heat-sinking provisions for the package footprint.

What switching behaviour should I expect from the gate characteristics?

With a typical total gate charge of 48nC, designers can estimate switching energy and select gate drivers that balance switching speed and EMI for their topology.