Vishay E Type N-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-GE3

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Subtotal (1 pack of 5 units)*

Kr.61 88 

(exc. VAT)

Kr.77 35 

(inc. VAT)

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Per unit
Per Pack*
5 +Kr. 12,376Kr. 61,88

*price indicative

Packaging Options:
RS Stock No.:
210-4977
Mfr. Part No.:
SIHB21N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

17.4A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

205mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

179W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

48nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

14.61mm

Width

9.65 mm

Standards/Approvals

No

Height

4.06mm

Automotive Standard

No

The Vishay E Series Power MOSFET has D2PAK (TO-263) package type with 17.4 A drain current.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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