Vishay E Type N-Channel Power MOSFET, 19 A, 500 V Enhancement, 3-Pin TO-247AC SIHG20N50E-GE3

RS Stock No.:: 169-5791
Mfr. Part No.:: SIHG20N50E-GE3
Brand:: Vishay

Vishay E Type N-Channel Power MOSFET, 19 A, 500 V Enhancement, 3-Pin TO-247AC SIHG20N50E-GE3

Subtotal (1 tube of 25 units)*

Kr. 724,15

(exc. VAT)

Kr. 905,20

(inc. VAT)

FREE delivery for online orders over 750,00 kr

In Stock

Plus 175 unit(s) shipping from 17 August 2026

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Units	Per unit	Per Tube*
25 +	Kr. 28,966	Kr. 724,15

*price indicative

RS Stock No.:: 169-5791
Mfr. Part No.:: SIHG20N50E-GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	500V
	Series	E
	Package Type	TO-247AC
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	184mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	46nC
	Maximum Power Dissipation Pd	179W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Width	5.31mm
	Standards/Approvals	RoHS
	Height	20.82mm
	Length	15.87mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 500V
	Series E
	Package Type TO-247AC
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 184mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 46nC
	Maximum Power Dissipation Pd 179W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Width 5.31mm
	Standards/Approvals RoHS
	Height 20.82mm
	Length 15.87mm
	Automotive Standard No

COO (Country of Origin):: CN

Vishay Series E Power MOSFET, 500V Drain Source Voltage, 19A Continuous Drain Current - SIHG20N50E-GE3

This power MOSFET is a high-voltage N-channel enhancement device designed for power conversion and switching applications. It offers robust switching capability suitable for through-hole mounting in conventional assemblies and operates across a wide ambient temperature range for demanding electronic environments.

Features and Benefits:

• 500V drain capability supports high-voltage power stages
• 19A continuous drain current enables substantial load handling
• 179W power dissipation allows high-power operation
• 184mΩ maximum RDS(on) minimises conduction losses
• 46nC typical gate charge reduces switching control energy
• 30V maximum gate rating permits standard gate drive voltages

Applications

• Suitable for power electronics MOSFETs for switching supplies
• Ideal for through-hole TO-247 power transistor 500V assemblies
• Used with high-voltage inverter and motor-drive stages
• Can be used for industrial power supplies and converters
• Used for legacy through-hole repairs and prototype boards

What are the thermal limits for deployment in hot environments?

It is specified to function from -55°C up to 150°C, permitting operation in elevated-temperature systems.

Which mounting method is required for reliable installation?

The device uses through-hole mounting in a TO-247AC package, compatible with standard wave or manual soldering processes and heatsinking arrangements.

What gate-drive considerations should I allow for during design?

Design for a maximum gate-source rating of 30V and account for a typical gate charge of 46nC when sizing drive circuitry.

How does the part comply with material restrictions for manufacturing?

It is RoHS-compliant, meeting material restriction requirements for environmental regulations.