Vishay SiHU5N80AE Type N-Channel MOSFET, 4.4 A, 800 V Enhancement, 3-Pin IPAK

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Subtotal (1 reel of 3000 units)*

Kr.16 290 00 

(exc. VAT)

Kr.20 370 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 5,43Kr. 16 290,00

*price indicative

RS Stock No.:
204-7228
Mfr. Part No.:
SIHU5N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.4A

Maximum Drain Source Voltage Vds

800V

Series

SiHU5N80AE

Package Type

IPAK

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.35Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

16.5nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

62.5W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.73mm

Height

6.22mm

Width

2.39 mm

Automotive Standard

No

The Vishay E Series Power MOSFET has a low figure-of-merit (FOM) Ron x Qg and a low input capacitance (Ciss).

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

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