Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-220AB SIHP15N80AE-GE3

RS Stock No.:: 210-4992
Mfr. Part No.:: SIHP15N80AE-GE3
Brand:: Vishay

Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-220AB SIHP15N80AE-GE3

Subtotal (1 pack of 5 units)*

Kr. 87,86

(exc. VAT)

Kr. 109,825

(inc. VAT)

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Units	Per unit	Per Pack*
5 +	Kr. 17,572	Kr. 87,86

*price indicative

RS Stock No.:: 210-4992
Mfr. Part No.:: SIHP15N80AE-GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-220AB
	Series	E
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	304mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	156W
	Typical Gate Charge Qg @ Vgs	53nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Height	4.24mm
	Standards/Approvals	RoHS
	Length	27.69mm
	Width	9.96mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-220AB
	Series E
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 304mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 156W
	Typical Gate Charge Qg @ Vgs 53nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Height 4.24mm
	Standards/Approvals RoHS
	Length 27.69mm
	Width 9.96mm
	Automotive Standard No

Datasheet - SIHP15N80AE

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 13A Continuous Drain Current - SIHP15N80AE-GE3

This power MOSFET is a high-voltage N-channel switching device designed for through-hole mounting in power conversion and control circuits. It operates across a wide temperature span and is intended for applications requiring elevated voltage withstand, moderate continuous current capability and gate-driven enhancement-mode switching. The device is supplied in a TO-220AB package with three pins for conventional board or heatsink installation.

Features and Benefits:

• 800V drain-source rating enables high-voltage switching
• 13A continuous drain current supports sustained load delivery
• 304mΩ Rds(on) minimises conduction losses at switching
• 156W power dissipation allows significant thermal handling
• 53nC total gate charge keeps gate-drive requirements predictable
• 30V gate-source tolerance permits robust drive voltage margins

Applications

• Suitable for high-voltage power supplies and converters
• Used for snubber and clamp circuits in industrial inverters
• Ideal for switched-mode power stages in lighting controls
• Can be used for motor drive front ends with through-hole mounting
• Used with laboratory test rigs requiring elevated voltage handling

What ambient range can it tolerate in demanding installations?

It is specified to operate from -55°C up to 150°C, allowing use in both cold and high-temperature environments.

How is the component mounted for effective heat dissipation?

The TO-220AB package is designed for through-hole attachment and can be mounted to a heatsink for improved thermal performance.

What type of channel and conduction mode does it employ?

The device is an N-channel enhancement-mode MOSFET, requiring a positive gate drive to conduct.

Which electrical characteristic determines switching voltage drop?

The forward voltage parameter of 1.2V is indicative of the device’s conduction voltage behaviour during forward current flow.