Name: Vishay E Type N-Channel MOSFET, 2.9 A, 800 V Enhancement, 3-Pin IPAK
Brand: Vishay
SKU: 210-4995
Price: 5.35 NOK
Availability: Discontinued

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2.9A
	Maximum Drain Source Voltage Vds	800V
	Series	E
	Package Type	IPAK
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2.5Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	62.5W
	Maximum Gate Source Voltage Vgs	30 V
	Typical Gate Charge Qg @ Vgs	10.5nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	6.73mm
	Height	2.18mm
	Width	6.22 mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2.9A
	Maximum Drain Source Voltage Vds 800V
	Series E
	Package Type IPAK
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2.5Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 62.5W
	Maximum Gate Source Voltage Vgs 30 V
	Typical Gate Charge Qg @ Vgs 10.5nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 6.73mm
	Height 2.18mm
	Width 6.22 mm
	Automotive Standard No

Datasheet - SIHU2N80AE-GE3

The Vishay E Series Power MOSFET has IPAK (TO-251) package type.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

Vishay E Type N-Channel MOSFET, 2.9 A, 800 V Enhancement, 3-Pin IPAK

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