Vishay E Type N-Channel MOSFET, 47 A, 600 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 25 units)*

Kr.1 698 85 

(exc. VAT)

Kr.2 123 55 

(inc. VAT)

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  • 225 unit(s) ready to ship
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Units
Per unit
Per Tube*
25 - 25Kr. 67,954Kr. 1 698,85
50 - 100Kr. 63,881Kr. 1 597,03
125 +Kr. 62,11Kr. 1 552,75

*price indicative

RS Stock No.:
165-2835
Mfr. Part No.:
SIHG47N60E-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

47A

Maximum Drain Source Voltage Vds

600V

Series

E

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

64mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

147nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

357W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

20.7mm

Standards/Approvals

No

Length

15.87mm

Width

5.31 mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor


The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features


Low figure-of-merit (FOM) RDS(on) x Qg

Low input capacitance (Ciss)

Low on-resistance (RDS(on))

Ultra-low gate charge (Qg)

Fast switching

Reduced switching and conduction losses

MOSFET Transistors, Vishay Semiconductor


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