Vishay E Type N-Channel MOSFET, 47 A, 600 V, 3-Pin TO-263
- RS Stock No.:
- 225-9909
- Mfr. Part No.:
- SIHB053N60E-GE3
- Brand:
- Vishay
Subtotal (1 tube of 50 units)*
Kr. 1 331,55
(exc. VAT)
Kr. 1 664,45
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- 700 unit(s) ready to ship
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | Kr. 26,631 | Kr. 1 331,55 |
*price indicative
- RS Stock No.:
- 225-9909
- Mfr. Part No.:
- SIHB053N60E-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 54mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 92nC | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Height | 15.88mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 54mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 92nC | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Height 15.88mm | ||
Automotive Standard No | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Related links
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