Vishay E Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-252

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Subtotal (1 pack of 25 units)*

Kr.230 75 

(exc. VAT)

Kr.288 50 

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 25Kr. 9,23Kr. 230,75
50 - 100Kr. 7,381Kr. 184,53
125 - 225Kr. 6,457Kr. 161,43
250 - 600Kr. 5,775Kr. 144,38
625 +Kr. 5,628Kr. 140,70

*price indicative

RS Stock No.:
200-6867
Mfr. Part No.:
SIHD6N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

950mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

22.5nC

Maximum Power Dissipation Pd

62.5W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay SIHD6N80AE-GE3 is a E series power MOSFET.

Low figure-of-merit

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

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