Vishay E Type N-Channel MOSFET, 2.9 A, 800 V Enhancement, 3-Pin IPAK SIHU2N80AE-GE3

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Subtotal (1 pack of 10 units)*

Kr.98 96 

(exc. VAT)

Kr.123 70 

(inc. VAT)

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Last RS stock
  • Final 2 700 unit(s), ready to ship
Units
Per unit
Per Pack*
10 - 90Kr. 9,896Kr. 98,96
100 - 240Kr. 9,632Kr. 96,32
250 - 490Kr. 9,392Kr. 93,92
500 - 990Kr. 9,129Kr. 91,29
1000 +Kr. 8,912Kr. 89,12

*price indicative

Packaging Options:
RS Stock No.:
210-4997
Mfr. Part No.:
SIHU2N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.9A

Maximum Drain Source Voltage Vds

800V

Package Type

IPAK

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2.5Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

62.5W

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

10.5nC

Maximum Operating Temperature

150°C

Length

6.73mm

Width

6.22 mm

Standards/Approvals

No

Height

2.18mm

Automotive Standard

No

The Vishay E Series Power MOSFET has IPAK (TO-251) package type.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

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