Vishay SiHU4N80AE Type N-Channel MOSFET, 4.1 A, 800 V Enhancement, 3-Pin IPAK

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Bulk discount available

Subtotal (1 tube of 75 units)*

Kr.1 038 375 

(exc. VAT)

Kr.1 297 95 

(inc. VAT)

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  • Shipping from 11. mai 2026
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Units
Per unit
Per Tube*
75 - 75Kr. 13,845Kr. 1 038,38
150 - 300Kr. 10,385Kr. 778,88
375 +Kr. 8,585Kr. 643,88

*price indicative

RS Stock No.:
188-4879
Mfr. Part No.:
SIHU4N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.1A

Maximum Drain Source Voltage Vds

800V

Package Type

IPAK

Series

SiHU4N80AE

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.44Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

11nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

62.5W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

2.38 mm

Length

6.73mm

Height

6.22mm

Automotive Standard

No

E Series Power MOSFET

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

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