Vishay E Type N-Channel MOSFET, 19 A, 500 V Enhancement, 3-Pin TO-247 SIHG20N50E-GE3

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Subtotal (1 pack of 2 units)*

Kr.82 14 

(exc. VAT)

Kr.102 68 

(inc. VAT)

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Units
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Per Pack*
2 - 18Kr. 41,07Kr. 82,14
20 - 98Kr. 38,665Kr. 77,33
100 - 198Kr. 34,95Kr. 69,90
200 - 498Kr. 32,89Kr. 65,78
500 +Kr. 30,83Kr. 61,66

*price indicative

RS Stock No.:
121-9656
Mfr. Part No.:
SIHG20N50E-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

500V

Package Type

TO-247

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

179W

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

46nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

20.82mm

Standards/Approvals

No

Width

5.31 mm

Length

15.87mm

Automotive Standard

No

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor


The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features


Low figure-of-merit (FOM) RDS(on) x Qg

Low input capacitance (Ciss)

Low on-resistance (RDS(on))

Ultra-low gate charge (Qg)

Fast switching

Reduced switching and conduction losses

MOSFET Transistors, Vishay Semiconductor


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