Vishay E Type N-Channel MOSFET, 21 A, 850 V Enhancement, 3-Pin TO-247 SIHG24N80AE-GE3

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Subtotal (1 pack of 2 units)*

Kr.100 44 

(exc. VAT)

Kr.125 56 

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 18Kr. 50,22Kr. 100,44
20 - 48Kr. 47,705Kr. 95,41
50 - 98Kr. 45,19Kr. 90,38
100 - 198Kr. 42,67Kr. 85,34
200 +Kr. 32,605Kr. 65,21

*price indicative

Packaging Options:
RS Stock No.:
228-2870
Mfr. Part No.:
SIHG24N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-247

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

184mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

208W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

59nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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