Vishay E Type N-Channel MOSFET, 16.3 A, 850 V Enhancement, 3-Pin TO-247 SIHG21N80AEF-GE3

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Subtotal (1 pack of 2 units)*

Kr.94 04 

(exc. VAT)

Kr.117 56 

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 18Kr. 47,02Kr. 94,04
20 - 98Kr. 39,925Kr. 79,85
100 - 198Kr. 34,89Kr. 69,78
200 - 498Kr. 28,60Kr. 57,20
500 +Kr. 23,05Kr. 46,10

*price indicative

Packaging Options:
RS Stock No.:
228-2868
Mfr. Part No.:
SIHG21N80AEF-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

16.3A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

179W

Typical Gate Charge Qg @ Vgs

47nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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