Vishay E Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-263 SIHB11N80AE-GE3

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Subtotal (1 pack of 5 units)*

Kr.71 39 

(exc. VAT)

Kr.89 24 

(inc. VAT)

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Last RS stock
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Units
Per unit
Per Pack*
5 - 45Kr. 14,278Kr. 71,39
50 - 120Kr. 12,858Kr. 64,29
125 - 245Kr. 12,172Kr. 60,86
250 - 495Kr. 11,418Kr. 57,09
500 +Kr. 10,57Kr. 52,85

*price indicative

Packaging Options:
RS Stock No.:
210-4967
Mfr. Part No.:
SIHB11N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

391mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

42nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

78W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Length

14.61mm

Width

9.65 mm

Height

4.06mm

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET has D2PAK (TO-263) package type with single configuration.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

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