Vishay E Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-247 SIHG11N80AE-GE3

Subtotal (1 pack of 5 units)*

Kr.146 06 

(exc. VAT)

Kr.182 575 

(inc. VAT)

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Per Pack*
5 +Kr. 29,212Kr. 146,06

*price indicative

Packaging Options:
RS Stock No.:
210-4982
Mfr. Part No.:
SIHG11N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-247

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

391mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

78W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

28nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Width

15.5 mm

Height

4.83mm

Standards/Approvals

No

Length

45.3mm

Automotive Standard

No

The Vishay E Series Power MOSFET has TO-247AC package type with single configuration.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

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