Vishay E Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 3000 units)*

Kr.26 130 00 

(exc. VAT)

Kr.32 670 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 8,71Kr. 26 130,00

*price indicative

RS Stock No.:
210-4978
Mfr. Part No.:
SIHD11N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

391mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

28nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

78W

Maximum Operating Temperature

150°C

Length

9.4mm

Standards/Approvals

No

Height

2.2mm

Width

6.4 mm

Automotive Standard

No

The Vishay E Series Power MOSFET has DPAK (TO-252) package type with single configuration.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

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