Vishay E Type N-Channel MOSFET, 6.4 A, 650 V Enhancement, 3-Pin TO-252

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Subtotal (1 pack of 25 units)*

Kr.284 175 

(exc. VAT)

Kr.355 225 

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 25Kr. 11,367Kr. 284,18
50 - 100Kr. 10,786Kr. 269,65
125 - 225Kr. 10,506Kr. 262,65
250 - 600Kr. 10,232Kr. 255,80
625 +Kr. 9,976Kr. 249,40

*price indicative

RS Stock No.:
200-6829
Mfr. Part No.:
SIHD690N60E-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6.4A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

700mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

12nC

Maximum Power Dissipation Pd

62.5W

Maximum Gate Source Voltage Vgs

±30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay SIHD690N60E-GE3 is a E Series power MOSFET.

4th generation E series technology

Low figure-of-merit

Low effective capacitance

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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